The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

3 Optics and Photonics » 3.9 Terahertz technologies

[11a-S421-1~12] 3.9 Terahertz technologies

Mon. Mar 11, 2019 9:00 AM - 12:15 PM S421 (S421)

Isao Morohashi(NICT), Hiroaki Yasuda(NICT)

10:00 AM - 10:15 AM

[11a-S421-5] Fabrication of High-Power Resonant-Tunneling-Diode Terahertz Oscillators

Hiroki Tanaka1, Kazunori Kobayashi1, Ryunosuke Izumi1, Safumi Suzuki1, Masahiro Asada1 (1.Tokyo Tech)

Keywords:Terahertz, Resonant tunneling diode (RTD)

Terahertz (THz) radiation, between light waves and millimeter waves, has been receiving much attention because of its applications. Resonant tunneling diodes (RTDs) are major candidates for THz wave sources. However, the output power of RTD oscillators is small, in the order of 10 μW around 1 THz. We fabricated novel THz oscillators using RTDs with cavity resonators and bow-tie antennas for high output powers. Rectangular cavity resonators were fabricated by electron beam lithography technology using a tri-layer resist process (ZEP/PMGI/PMMA). The oscillator is composed of a line-shaped RTD mesa and a rectangular cavity resonator. Since the conduction loss and inductance of the rectangular cavity resonator is small, high output power oscillation with a large RTD mesa area is possible.