[11a-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11a-S422-9] Estimation of As and Sb incorporation into InAs/GaSb superlattice grown by MOVPE

〇Yuki Imamura¹, Yuya Yamagata¹, Yuki Nakayama¹, Ryosuke Wakaki¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:MOVPE, superlattice

There are many absorption lines of gases such as carbon oxide, carbon
dioxide and hydrocarbon gasses corresponding to the molecular vibration
in the mid-infrared range. Our target is to realize high performance
mid-infrared devices using InAs/GaSb type II superlattices. We
investigated layer thickness dependence of InAs/GaSb SL using XRD. InAs
and GaSb layer thickness affected the average lattice mismatch to InAs
substrate due to the residual arsenic material incorporation in a reactor.