[11a-W331-1~9] 3.15 Silicon photonics

[11a-W331-9] Study on High-Speed Photoresponsivity for Waveguide-Type Ge Photodetector with Lateral PIN Junction

〇Junichi Fujikata¹, Hideki Ono¹, Takasi Simoyama¹, Hiroki Yaegashi¹, Seok-Hwan Jeong¹, Takahiro Nakamura¹ (1.PETRA)

Keywords:photodetector, Ge, lateral PIN junction

We report on 50 GHz bandwidth of high-speed operation for a 20-40 μm-long Ge photodetector on a Si waveguide with lateral PIN junction and 3dB bandwidth dependence on input optical power.