[11a-W521-5~10] 17.3 Layered materials

[11a-W521-10] Evaluation of film quality by various deposition condition of MOCVD MoS₂ film using i-Pr₂DADMo(CO)₃ as Mo precursor

〇(B)Kota Yamazaki¹, Yusuke Hibino^1,4, Seiya Ishihara^1,4, Yuya Oyanagi¹, Yusuke Hashimoto¹, Naomi Sawamoto¹, Hideaki Machida³, Manato Ishikawa³, Hiroshi Sudo³, Hitoshi Wakabayashi², Atushi Ogura¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd., 4.JSPS Research Fellow)

Keywords:Transition metal dichalcogenide, MOCVD, Molybdenum disulfide

The MoS₂ film, which is one of the transition metal dichalcogenide, is expected to be applied to various device such as new channel material, but the establishment of a film formation method with high quality and excellent productivity is a problem for practical use. We have focused on the MOCVD method as a deposition method suitable for device application. In this presentation, we report on the result of film quality evaluation under different deposition conditions for the MOCVD MoS₂ film using i-Pr₂DADMo(CO)₃ which was previously reported as a novel Mo precursor.