[11a-W521-5~10] 17.3 Layered materials

△ [11a-W521-5] Layer Number Controlled Synthesis of Integrated WS₂

〇Tomoya Kameyama¹, Chao Li¹, Toshiro Kaneko¹, Toshiaki Kato^1,2 (1.Dept. of Electronic Eng. , Tohoku Univ., 2.JST-PRESTO)

Keywords:transition metal dichalcogenide, synthesis, layer number control

Large area synthesis of integrated WS₂ was realized by Au dot technology, which can control WS₂ nucleation position. In this study, layer number controlled synthesis of integrated WS₂ is tried by tuning Ar flow rate which is carrier gas in thermal CVD. As a result, layer number controlled synthesis of integrated WS₂ has been realized. In high Ar flow rate, monolayer WS₂ was obtained and in low Ar flow rate, multilayer WS₂ was obtained. Furthermore, precursors during CVD were observed by introducing quadratic mass measurement. This indicates W and S ratio is important in layer number controlled synthesis of WS2.