The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-W541-1~12] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 9:00 AM - 12:15 PM W541 (W541)

Ryota Ishii(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

9:15 AM - 9:30 AM

[11a-W541-2] Structural characteristics of AlGaN multiple-quantum-wells
grown on c-plane AlN/sapphire templates with macro-steps (1)

Kazunobu Kojima1, Yosuke Nagasawa2, Akira Hirano2, Masamichi Ippommatsu2, Yoshio Honda3, Hiroshi Amano3,4,5, Isamu Akasaki6, Shigefusa Chichibu1 (1.IMRAM, Tohoku Univ., 2.UV craftory, 3.IMaSS, Nagoya Univ., 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ., 6.Meijo Univ.)

Keywords:AlGaN