The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-W541-1~12] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 9:00 AM - 12:15 PM W541 (W541)

Ryota Ishii(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

11:00 AM - 11:15 AM

[11a-W541-8] Analytical solution for quantum efficiency of radiation considering self-absorption process

Hidehiro Asai1, Kazunobu Kojima2, Shigefusa Chichibu2, Koichi Fukuda1 (1.AIST, 2.IMRAM-Tohoku Univ.)

Keywords:Wide gap semiconductor, Quantum efficiency of radiation, Calibration curve

In this study, we theoretically formulate an external quantum efficiency (EQE) of semiconducting crystals, and clarify the relation between the EQE and the density of non-radiative recombination center. Unlike the internal quantum efficiency (IQE), the EQE is strongly affected by the self-absorption process in the crystals.