[11a-W933-1~11] 6.6 Probe Microscopy

[11a-W933-5] Dependence of spatial resolution on probe load in SSRM measurements

〇Jun Yoshigiwa¹, Koichiro Saga¹ (1.Sony Semicon Corp.)

Keywords:resolution, SSRM, carrier

In order to accurately ascertain carrier distribution in semiconductors, high spatial resolution is required for measurement methods such as SSRM. In order to accurately evaluate the resolution, a sample in which a conductive thin film and an insulating thin film were laminated was prepared. Then, the resolution was calculated from the SSRM measurement result. When the probe load on the sample was 5 μN, the resolution was 5.0 nm, 6.9 nm at 10 μN, and 13.7 nm at 20 μN, marked load dependence was observed. In the high load measurement, the current distribution in the sample expands and the high concentration region appears to be wider than it actually is.