[11a-W934-1~11] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

▲ [11a-W934-11] The Schottky barrier height modulation of Pd₂Si/p-Si(100) diodes by dopant segregation process

〇RengieMark Domincel Mailig¹、Min Gee Kim¹、Shun-ichiro Ohmi¹ (1.Tokyo Institute of Technology)

キーワード：palladium silicide, dopant segregation process, Schottky barrier height

In this work, the modulation of the SBH of Pd₂Si/p-Si(100) diodes with phosphorus (P) dopants (P-DS) was investigated for future applications in the nMISFET fabrication for the low thermal budget gate-first CMOS. The SBH to electron was lowered to 0.61 eV by using the DS process with P dopants on Pd₂Si/p-Si(100) diodes. Increasing the amount of dopant decreases the SBH to electron of the Pd₂Si/p-Si(100) diodes.