[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-11] PL analysis of individual partial dislocations in 4H-SiC epilayers

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Mitsuhiro Kushibe¹ (1.Toshiba Corp.)

Keywords:silicon carbide, photoluninescence, partial dislocation

Individual Shockley partial dislocations, which are component of basal plane dislocations, were analyzed by photoluminescence. As a result, we have found that round-shaped C-core partial dislocations have different peak wavelength according to the place on a single dislocation line. Detailed results and discussion will be presented.