[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-16] Gate-bias control of single photon sources in channel region of 4H-SiC MOSFET (II)

〇(D)Yuta Abe^1,2, Takahide Umeda¹, Mitsuo Okamoto³, Shinsuke Harada³, Shin-ichiro Sato², Yuichi Yamazaki², Takeshi Ohshima² (1.Univ. of Tsukuba, 2.QST, 3.AIST)

Keywords:MOS interface, single photon source, defect

Single photon source (SPS) which emits one photon for one luminescent event is studied as an application for quantum cryptography and quantum sensing. Silicon Carbide (SiC) has various SPSs (for example, silicon vacancy) and we found very bright SPSs in channel region of 4H-SiC MOSFET at room temperature. The SPSs we found changed their luminescent intensity by gate voltage. They included 2 types of SPS which the luminescent intensity is increased and decreased. In this study, we investigate the differences between the 2 types of SPS.