[11p-M112-1~15] 12.2 Characterization and Materials Physics

[11p-M112-5] Interpretation of hν-dependent low energy high-sensitivity photoemission spectrum (1)

〇Hisao Ishii^1,3,4, Shunsuke Kimata², Hokuto Hamada², Takefumi Kikuchi², Ichiro Ide³, Daisuke Sano³, Taichi Maruyama³, Yuki Yamaguchi³, Atsushi Matsuzaki³, Kouhei Shimizu³, Yuya Tanaka^1,3 (1.Chiba Univ. CFS, 2.Chiba Univ. Fac. of Eng., 3.Chiba Univ.Grad. School of Sci. and Eng., 4.Chiba Univ. MCRC)

Keywords:photoemission spectroscopy, organic semiconductor, density of states

To understand organic electronics, the elucidation of bulk and interface electronic structures of organic semiconductors is indispensable. We have developped a new technique, low energy high-sensitivity UV photoemission using a series of photon energies to detect HOMO, gap states, density-of-states (DOS) including trap states, anion states and so on. In this presentation, we will discuss how to determine DOS from a series of spectra by eluminating photon energy dependence of photoemission crosssection.