[11p-M136-1~14] 13.3 絶縁膜技術

▲ [11p-M136-2] High quality silicon dioxide by low temperature neutral beam enhanced atomic layer deposition

〇HuaHsuan Chen¹、Daisuke Ohori¹、Takuya Ozaki¹、Mitsuya Utsuno²、Tomohiro Kubota²、Toshihisa Nozawa²、Seiji Samukawa^1,3 (1.IFS, Tohoku Univ.、2.ASM Japan K.K.、3.AIMR, Tohoku Univ.)

キーワード：atomic layer deposition, neutral beam enhancement, silicon dioxide

Conventional atomic layer deposition techniques have shown good thin-layer conformality. However, they have some limitations. In this study, some results of a novel deposition technique, neutral beam enhanced atomic layer deposition (NBEALD), are presented. We used this hybrid technique which utilizes neutral beam technology in atomic layer deposition process to deposit SiO₂ layer using Aminosilane and O₂ neutral beam at low substrate temperature near room temperature. The results demonstrate typical ALD process and good thickness control at nanometer level. Film properties such as chemical composition, surface roughness, uniformity and wet etch rate are also shown in this study.