The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-PA4-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PA4 (PA)

1:30 PM - 3:30 PM

[11p-PA4-11] Influence of In segregation on InAs QDs growth in DWELL

Naoki Okada1, Daigo Ikuno1, Tao Wang1, Shunsuke Ohkouchi2, Nobuhiko Ozaki1 (1.Wakayama Univ., 2.NEC corp.)

Keywords:epitaxial growth, iii-v semiconductor, molecular beam epitaxy