Effects of Temperature on Growth of Ge Thin Film Si (001) substrate using tBGe

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PA4 (PA)

1:30 PM - 3:30 PM

〇Koichiro Iwamoto¹, Hironori Akita¹, Syotaro Shirakura¹, Masahiro Kawano¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

Keywords:germanium, silicon