[11p-PA4-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-PA4-13] GaSb thickness dependence of InAs / GaSb superlattice grown by the metalorganic chemical vapor deposition growth method analyzed by Raman scattering measurement

〇Taiki Aso¹, Koji Maeda¹, Masakazu Arai¹, Yuya Yamagata¹ (1.Miyazaki Univ.)

Keywords:Raman measurement, InAs/GaSb superlattice