The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[11p-PB3-16] Evaluation of lightly-implanted Mg and co-implantation into p-GaN epi layers by capacitance measurement

Shinya Takashima1, Katsunori Ueno1, Ryo Tanaka1, Hideaki Matsuyama1, Masaharu Edo1, Kohei Shima2, Kazunobu Kojima2, Shigefusa F. Chichibu2,3, Akira Uedono4 (1.Fuji Electric, 2.Tohoku Univ., 3.Nagoya Univ. IMass, 4.Tsukuba Univ.)

Keywords:GaN, implantation

For p-GaN formation by Mg implantation, it is important to reduce remaining defects, and recently co-implantation of H or N has been reported to be effective. In this research, capacitance measurement was carried out by implanting Mg and H or N with low concentration into p-GaN epi layer. By comparing the defect influence, although H co-implantation caused the decrease of the capacitance and increase of the hysteresis, N co-implantation showed improvement those properties, which is expected to contribute to the hole trap reduction.