[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-23] Analysis of SiC/Si bonding interface with thermal annealing treatment by XPS

〇Zexin Wan¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

Keywords:surface activated bonding, power device, SiC/Si heterojunction