[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-5] Mapping of photo-electrochemical etched Ni/n-GaN Schottky contacts
using scanning internal photoemission microscopy

〇Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

Keywords:GaN, scanning internal photoemission microscopy, photo-electrochemical etching

In this paper, we present the experimental results on mapping characterization of selectively photo-electochemical etched GaN Schottky contacts by using scanning internal photoemission microscopy. In the periphery of the etched region, large photocurrent and low Schottky barrier height were observed. In this study, as the etched region was defined by irradiating UV light beam, the inclined facet was formed during the etching.