The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 1:45 PM - 6:45 PM S011 (South Lecture Bldg.)

Kohei Sasaki(ノベルクリスタルテクノロジー), Hiroyuki Nishinaka(Kyoto Inst. of Tech.), Takumi Ikenoue(Kyoto Univ.)

3:30 PM - 3:45 PM

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga2O3 Crystal

〇Kouya Tanaka1, Kohei Sasaki2, Tomohiro Yamaguchi1, Tohru Honda1, Akito Kuramata2, Shigenobu Yamakoshi3, Higashiwaki Masataka4, Takeyoshi Onuma1,4 (1.Kogakuin Univ., 2.Novel Crystal Technology Inc., 3.Tamura Corp., 4.NICT)

Keywords:Gallium Oxide, Electroreflectance, Optical Properties

Gallium oxide has a band gap of 4.5 eV, high breakdown field (8 MV/cm), attracting attention as a material for power devices. Electroreflectance spectroscopy (ER method) is a very effective method for investigating the band structure in detail. However, there have been few reports applied to gallium oxide so far. Therefore, in this study, the band structure of gallium oxide was analyzed by ER method.