[11p-S321-1~17] 11.4 Analog applications and their related technologies

[11p-S321-2] Preparation of Nb₃Ge superconducting thin films

〇Akira Kawakami¹, Hirotaka Terai¹, Yoshinori Uzawa² (1.NICT, 2.NAOJ)

Keywords:Nb3Ge, SIS

We tried to fabricate Nb₃Ge superconducting thin film for constructing tuning circuit for THz SIS mixer. As a deposition method, a multi-source sputtering method which has high freedom of film composition control was adopted. Nb, Ge and Si were prepared as target materials, and composition control was carried out by controlling the each input powers. The substrate heater temperature was set to 920 °C. The deposited film thickness, the superconducting transition temperature, and the film resistivity were about 180 nm, about 21 K, and about 45 micro-ohm-cm, respectively.