The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[11p-W321-1~14] 13.9 Compound solar cells

Mon. Mar 11, 2019 1:45 PM - 5:30 PM W321 (W321)

Kentaroh Watanabe(Univ. of Tokyo), Yasushi Shoji(AIST)

4:00 PM - 4:15 PM

[11p-W321-9] Ohmic InP/Si Heterointerfaces by Direct Semiconductor Wafer Bonding

Ryoichi Inoue1, Katsuaki Tanabe1 (1.Kyoto Univ.)

Keywords:semiconductor wafer bonding, multijunction solar cell, ohmic heterostructure

Direct-bonded ohmic InP / Si heterostructures are realized for the fabrication of lattice-mismatched multijunction solar cells and replacement of compound semiconductor substrates with silicon substrates. We have examined the dependence of electrical conductivity on bonding temperature and doping type.