The 66th JSAP Spring Meeting, 2019

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17 Nanocarbon Technology » 17.3 Layered materials

[11p-W521-1~18] 17.3 Layered materials

Mon. Mar 11, 2019 1:45 PM - 6:30 PM W521 (W521)

Masaki Nakano(Univ. of Tokyo), Takamasa Kawanago(Tokyo Institute of Technology)

4:45 PM - 5:00 PM

[11p-W521-12] Increase of Dit from depositing insulator to 1L MoS2/h-BN/Graphite

〇Satoshi Toyoda1, Nan Fang1, Takashi Taniguchi2, Kenji Watanabe2, Kosuke Nagashio1 (1.UTokyo, 2.NIMS)

Keywords:1L-MoS2, h-BN, stacking

When gate insuletor was deposited on 1L-MoS2/h-BN/Graphite FET, Dit was increased. But the increase was smaller than the case of 1L-MoS2/SiO2/Si. Therefore, it would be possibe that strain in MoS2 from roughness of substrate was amplified by deposition of insulator.