The 66th JSAP Spring Meeting, 2019

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17 Nanocarbon Technology » 17.3 Layered materials

[11p-W521-1~18] 17.3 Layered materials

Mon. Mar 11, 2019 1:45 PM - 6:30 PM W521 (W521)

Masaki Nakano(Univ. of Tokyo), Takamasa Kawanago(Tokyo Institute of Technology)

5:00 PM - 5:15 PM

▲ [11p-W521-13] Sulfur vacancies degrade interface at valence band side in MoS2 FET

〇Nan Fang1, Kosuke Nagashio1 (1.Tokyo Univ.)

Keywords:Sulfur vacancies, MoS2, valance band

Although stable p-type 2D-FET is required for complementary transistor operation, the transistor performance of defect-related p-type 2D channels, such as WSe2, SnS2 and so on, is generally low, compared with widely studied n-type MoS2 FET. Here, Nb doped p-type MoS2 crystals are available now. In this study, we study the hole transport of Nb-doped MoS2 FET in order to reveal the interface states (Dit) at valance band (VB) side.