[11p-W521-1~18] 17.3 Layered materials

▲ [11p-W521-2] Quantum-mechanical effects in atomically thin MoS₂ FET

〇Nan Fang¹, Kosuke Nagashio¹ (1.Tokyo Univ.)

Keywords:Quantum-mechanical effects, MoS2

C-V measurement is the powerful tool to gain further insight into the device physics of 2D materials. We have successfully measured quantum capacitance (C_Q) in monolayer MoS₂ FET. C_Q is originally derived from the finite DOS of a 2D electron gas and Fermi distribution. With increasing channel thickness, the electron distribution in the finite channel thickness should contribute to the total capacitance (C_total). Here, we discuss thickness dependence of quantum-mechanical effects in MoS₂ FET.