[11p-W541-1~20] 15.4 III-V-group nitride crystals

[11p-W541-16] Formation of high-density (> 1×10¹¹ cm^-2) GaN/AlGaN quantum dots by MOCVD

〇Munetaka Arita¹, Yang Mei^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo, 2.Xiamen Univ.)

Keywords:Quantum dots, GaN, MOCVD

We have successfully grown high-density (> 1×10¹¹ cm^-2) GaN/AlGaN quantum dots (QDs) by MOCVD.
It is revealed that after-growth annealing conditions have great impact on coarsening of GaN QDs. Then, according to the investigated NH₃-temperature dependence of GaN/n-AlGaN surface morphology, we found that, by accurately controlling NH₃ flow rate, very high density (an order of magnitude higher than our previous results) GaN/AlGaN QDs can be spontaneously formed even though there exists relatively small lattice mismatch.