The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Atsushi Kobayashi(Univ. of Tokyo)

5:45 PM - 6:00 PM

[11p-W541-16] Formation of high-density (> 1×1011 cm-2) GaN/AlGaN quantum dots by MOCVD

Munetaka Arita1, Yang Mei1,2, Yasuhiko Arakawa1 (1.NanoQuine, Univ. of Tokyo, 2.Xiamen Univ.)

Keywords:Quantum dots, GaN, MOCVD

We have successfully grown high-density (> 1×1011 cm-2) GaN/AlGaN quantum dots (QDs) by MOCVD.
It is revealed that after-growth annealing conditions have great impact on coarsening of GaN QDs. Then, according to the investigated NH3-temperature dependence of GaN/n-AlGaN surface morphology, we found that, by accurately controlling NH3 flow rate, very high density (an order of magnitude higher than our previous results) GaN/AlGaN QDs can be spontaneously formed even though there exists relatively small lattice mismatch.