5:45 PM - 6:00 PM
[11p-W541-16] Formation of high-density (> 1×1011 cm-2) GaN/AlGaN quantum dots by MOCVD
Keywords:Quantum dots, GaN, MOCVD
It is revealed that after-growth annealing conditions have great impact on coarsening of GaN QDs. Then, according to the investigated NH3-temperature dependence of GaN/n-AlGaN surface morphology, we found that, by accurately controlling NH3 flow rate, very high density (an order of magnitude higher than our previous results) GaN/AlGaN QDs can be spontaneously formed even though there exists relatively small lattice mismatch.