The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Atsushi Kobayashi(Univ. of Tokyo)

2:00 PM - 2:15 PM

[11p-W541-3] Electrical properties of Si-doped AlN prepared on sapphire by sputtering

〇Yuya Sakurai1, Kohei Ueno1, Atsushi Kobayashi1, Kenjiro Uesugi2, Hideto Miyake2, Hiroshi Fujioka1,3 (1.IIS, the Univ. of Tokyo, 2.Mie Univ., 3.JST-ACCEL)

Keywords:sputtering, semiconductor, AlN