The 66th JSAP Spring Meeting, 2019

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Atsushi Kobayashi(Univ. of Tokyo)

3:30 PM - 3:45 PM

[11p-W541-8] Characterization of GaN tunnel junction contact grown on LED by sputtering

〇Taiga Fudetani1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1,2 (1.IIS, UTokyo, 2.JST-ACCEL)

Keywords:GaN, tunnel junction, sputtering