The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Atsushi Kobayashi(Univ. of Tokyo)

3:45 PM - 4:00 PM

[11p-W541-9] Growth and characterization of p-type GaN prepared by sputtering

〇Keita Shibahara1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1,2 (1.IIS, U-Tokyo, 2.JST-ACCEL)

Keywords:DLTS, GaN, sputtering