The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[11p-W611-1~12] 3.13 Semiconductor optical devices

Mon. Mar 11, 2019 1:45 PM - 5:00 PM W611 (W611)

Taro Arakawa(Yokohama National Univ.), Shiro Uchida(Chiba Inst. of Tech.)

2:30 PM - 2:45 PM

[11p-W611-4] Temperature Characteristics Analysis of Resistance and Efficiency of Semiconductor Lasers for Low Temperature Optical Wireless Power Transmission

〇(B)Hinata Kohara1, Tomoyuki Miyamoto1 (1.Tokyo Tech)

Keywords:Optical Wireless Power Transmission, semiconductor laser

Optical wireless power transmission is promising, but low power transmission efficiency is a problem. Since the product of the conversion efficiency of the light source and the photodetector is the upper limit of the power transmission efficiency, it is as low as 10% in typical devices. However, the efficiency of the semiconductor laser and solar cell of the light source increases at low temperature. For this reason, high efficiency of the optical wireless power transmission system can be expected by application of low temperature system and local cooling of the power transmission / receiving section.In this research, efficiency was analyzed from the characteristic temperature of the light source the last time with the goal of elucidating the applicability of low-temperature optical transmission. In order to clarify the limit characteristics and application conditions, the influence of the temperature dependency of the electric resistance value of the light source was analyzed this time.