[11p-W810-1~17] 31.1 Focused Session "AI Electornics"

[11p-W810-17] A Crystalline Oxide Semiconductor-FET/Si-FET Hybrid Structure-based Multiply-Accumulate circuit for Artificial Neural Network Applications

〇Takeshi Aoki¹, Munehiro Kozuma¹, Yoshiyuki Kurokawa¹, Hajime Kimura¹, Shunpei Yamazaki¹ (1.SEL)

Keywords:A Crystalline Oxide Semiconductor, neural network, IGZO

Efficient use of memories and multiply-accumulate circuits is essential for an artificial neural network (ANN). Use of crystalline oxide-semiconductor field-effect transistors (OS-FETs) enables formation of multi-level memories with high charge-storage capacity because the OS-FETs have extremely low off-state current. This work shows circuit simulation of a multi-bit multiply-accumulate circuit configured with Si-FET current sources and OS-FET memories for ANN applications.