The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11p-W834-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 11, 2019 1:15 PM - 6:30 PM W834 (W834)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

5:30 PM - 5:45 PM

[11p-W834-15] Characterization of Vacancy Defects in Ion-Beam-Synthesized β-FeSi2 Films

〇Atsushi YABUUCHI1, Takuya Karatsu1, Atsushi Kinomura1, Masaki Maekawa2, Atsuo Kawasuso2 (1.Kyoto Univ., 2.QST)

Keywords:lattice defect, vacancy, positron annihilation

Enhancement of PL intensity of ion-beam-synthesized β-FeSi2 film by Al-doping has been reported. This enhancement was thought to be caused by Al atoms which substitute Si sites suppressing Si vacancies. However, the characterization by using a positron annihilation spectroscopy resulted in suggesting vacancy formation by Al-doping. In this study, we investigated the positron trapping site in the β-FeSi2 samples and found the possibility of Fe vacancy formation by Al-doping.