The 66th JSAP Spring Meeting, 2019

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11p-W834-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 11, 2019 1:15 PM - 6:30 PM W834 (W834)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

1:30 PM - 1:45 PM

[11p-W834-2] Change of band structure of Mg2Si induced by interstitial doping with non-metallic elements

〇Yoji Imai1, Atsushi Yamamoto1, Ken-ichi Takarabe2 (1.AIST, 2.Okayama Univ. Sci.)

Keywords:Mg2Si, electronic structure, interstitial solid solution

We report the results of first principles calculations on the change of the electronic structure when nonmetallic elements occupies the 4b site of semiconducting Mg2Si