[12a-M111-1~9] 15.7 Crystal characterization, impurities and crystal defects

[12a-M111-4] Oxygen Transport Process in Silicon Melt under Inhomogeneous Magnetic Fields

〇Koichi Kakimoto¹, Liu Xin¹, Satoshi Nakano¹, Yoshiji Miyamura¹, Hirofumi Harada¹, Shin-ichi Nishizawa¹ (1.RIAM, Kyushu Univ.)

Keywords:semiconductor, Silicon, Crystal growth

This paper reports the effect of inhomogeneous distribution of transverse magnetic fields on oxygen transport in silicon melt during CZ growth. Relative position between the inhomogeneous magnetic field and silicon melt modifies melt flow, then oxygen transport is also modified. The details will be presented.