[12a-M111-1~9] 15.7 Crystal characterization, impurities and crystal defects

[12a-M111-6] Observation of dislocations around crystal necking parts of CZ-Silicon using super-Borrmann effect

〇(M1)Yu Fujita¹, Haruka Kamamoto¹, Hiroyuki Mizuochi¹, Tomoyuki Horikawa², Yoshiyuki Tsusaka^1,3, Junji Mastui³ (1.Univ. of Hyogo, 2.GlobalWafers Japan Co., Ltd., 3.Syn. Rad. Nano-Tech. Center)

Keywords:X-ray topography, Synchrotron, dislocation

Dislocations around necking parts of CZ-Silicon crystal were observed by means of X-ray topography exerting super-Borrmann effect.When simultaneous diffractions of g₁₁₁ and g_-111 are excited, the absorption coefficient for X-rays becomes smaller than that of usual Borrmann effect, which is so-called super-Borrmann effect. The X-ray topograph reflecting this effect can reveal that the dislocation density decreases at a small diameter region of the necking parts.