[12a-M111-1~9] 15.7 Crystal characterization, impurities and crystal defects

△ [12a-M111-7] 3D visualization of inclusions distribution in HP mc-Si ingot

〇(M1C)Soichiro Kamibeppu¹, Patricia Krenckel², Theresa Troetschler², Adam Hess², Stephan Riepe², Noritaka Usami¹ (1.Nagoya Univ., 2.Fraunhofer ISE)

Keywords:crystal growth, data science, IR

In this study, inclusion distribution in High-Perfomance multicrystalline Si was measured by IR measurement and was analysed by using the approach of data science. From this study, we can know that the needle inclusions gets longer as crystal growth progress and many inclusions gather like planes. It is assumed that this plane is along with the interface of crystal growth. In this study, we extract this plane and visualized on 3D.