[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga₂O₃ MOSFETs with Nitrogen-Doped Current Blocker

〇ManHoi Wong¹, Ken Goto^2,3, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. Agricul. Technol., 3.Tamura Corp.)

Keywords:Ga2O3, vertical MOSFET, ion implantation

Vertical power switching devices are desirable for high-voltage applications since they allow for superior field termination, high current drives, and simplified thermal management. β-Ga₂O₃ is amenable to doping with both shallow donors (Si) and deep acceptors (Mg, N) by ion implantation with efficient dopant activation at a low thermal budget, thereby enabling device fabrication by a highly manufacturable all-ion-implanted process resembling that for SiC MOSFETs. In this work, a current aperture vertical β-Ga₂O₃ MOSFET is demonstrated by integration N-ion and Si-ion implantation doping.