[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

[12a-M121-7] Small-signal RF characteristics for submicron-gate MOSFETs fabricated on hetero-epitaxial diamond substrate

Yuma Ishimatsu¹, Toshiyuki Oishi¹, Takuya Kamogawa¹, Saha Niloy Chandra¹, Seong-Woo Kim², 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:diamond, RF, FET

We fabricated submicron-gate diamond FET on heteroepitaxial diamond, and measured RF characteristics.