9:30 AM - 11:30 AM
[12a-PA3-13] Deep-Level Defect Investigation of Si-Doped β-Ga2O3 Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy
Keywords:Ga2O3, deep-level defect, HVPE growth
We have electrically investigated deep-level defects in Si-doped β-Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy (HVPE), employing a steady-state photo-capacitance spectroscopy technique.Two distinct deep levels were found to be located at ~3.67eV and ~4.0eV above the valence band, probably attributable to oxygen vacancies produced by Si doping into β-Ga2O3 epitaxial films during the HVPE growth.