[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-13] Deep-Level Defect Investigation of Si-Doped β-Ga₂O₃ Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy

〇Yoshitaka Nakano¹, Akira Toyotome¹ (1.Chubu Univ.)

Keywords:Ga2O3, deep-level defect, HVPE growth

We have electrically investigated deep-level defects in Si-doped β-Ga₂O₃ homoepitaxial films grown by halide vapor phase epitaxy (HVPE), employing a steady-state photo-capacitance spectroscopy technique.Two distinct deep levels were found to be located at ~3.67eV and ~4.0eV above the valence band, probably attributable to oxygen vacancies produced by Si doping into β-Ga₂O₃ epitaxial films during the HVPE growth.