[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-4] Characterization of amorphous Al₂O₃ thin films prepared by mist-CVD

〇(M1)Kazuki Nishimura¹, Koshi Nishiyama¹, Yuki Fujimoto², Zenji Yatabe³, Yusui Nakamura^4,5 (1.GSST, Kumamoto Univ., 2.Sch. of Eng., Kumamoto Univ., 3.POIE, Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Kumamoto Phoenics)

Keywords:mist-CVD, Al2O3