[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-5] Growth of β-Ga₂(O_1-xS_x)₃ Alloy Films on YSZ Substrates by Mist Chemical Vapor Deposition

〇Tubasa Hiroe¹, Moe Nagano¹, Kazuaki Akaiwa¹, Tomoki Abe¹, Motohisa Kado², Kunio Ichino¹ (1.Tottori Univ., 2.Toyota Motor Corp.)

Keywords:Oxide semiconductor, Gallium Oxide, Mist Chemical Vapor Deposition