[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-9] Investigation of interfacial electronic states in annealed Ag/ZnO junctions

〇Yoshihito Yamagata^1,2, Takeo Ohsawa¹, Takumi Hosaka^1,2, Herve Montigaud³, Takamasa Ishigaki², Naoki Ohashi¹ (1.NIMS, 2.Hosei Univ., 3.Saint-Gobain Recherche)

Keywords:thin film, interface, electronic states

Low emissivity glasses, where a metal and a dielectric layer are laminated, require precise control of transmittance and reflectivity from the visible light to the infrared region. It is important to control film thickness of each layer and interface structure. However, due to thermal instability, dewettability, and oxidation of metal layers, the optical functionalities of such multi-layers often degrade. In this study, we investigate the thermal stability and electronic states of interfaces between silver (Ag) and zinc oxide (ZnO) as a model junction. Finally, we find that diffusion and oxidation process of Ag is clarified by post-deposition annealing.