[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-8] NO gas doping to ZnO films in a catalytic reaction assisted chemical vapor deposition

Ryuta Iba¹, Yuki Adachi¹, Abdul Manaf², 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol., 2.MJIIT)

Keywords:catalytic reaction, ZnO, nitrogen doping

Attempting to the nitrogen doping to ZnO films grown by a catalytic reaction assisted CVD, nitrogen radicals generated on heated Ir wire surface from NO molecules were supplied during the film growth. From X-ray photoelectron spectroscopy, the proportion of Zn-N component in N-1s peak for the ZnO film grown with N-radicals was investigated. It was found that the low growth temperature and NO gas pressure lower than 0.01 Pa was effective on the incorporation of nitrogen and the formation of the Zn-N component.