11:15 AM - 11:30 AM
▲ [12a-S221-9] Preparation of Zinc Doped Tin Oxide as an Electron Transport Interlayer for Organic Solar Cells
Keywords:semiconductor, buffer layer materials, organic solar cell
Organic solar cells have attracted broad attention due to their advantages of being light in weight, low in cost and solution process-able in large area. Zinc doped tin oxide (ZTO) is a ternary metal oxide possessing a high electron mobility, long term stability, good optical properties and high response speed, which makes it suitable for wide range of potential applications for solar cells. In this context, we focus on the preparation and characterization of crystalline ZTO and the application of this material as an electron transport interlayer for an organic solar cell with the structure of ITO/ZnO/ZTO/P3HT:PC61BM/MoO3/Ag.Zinc chloride and tin chloride were dissolved in acetonitrile. The solution was kept in the ultrasonic bath for 30 min, stirred at 50 C for 2 h and evaporated. Obtained powder was calcined at 100 C for 15 min and 950 C for 3 h. Water and isopropyl alcohol (4:1) was poured to form a suspension (1 mg/mL). Prior to the deposition, the samples were centrifuged at 6000 rpm for 5 min followed by filtration. ZTO layers were prepared by spin coating followed by calcination at 200 C for 10 min.XRD results revealed that the obtained ZTO was crystalline and had the cubic spinal phase. The dominant peak was observed to be in the (220) orientation and the average size of the particles were calculated along with the lattice parameter, which were found to be 39.50 nm and 0.953 nm, respectively. From the SEM images, the surfaces of the spin coated ZTO layers were observed to be smooth without any crack formations. Furthermore, the optical properties of the ZTO samples were investigated by the uv-vis characterization, from which the energy gap of the material was found to be 3.93 eV. The valence band of the material was estimated to be -8.0 eV.The devices on which ZTO was coated twice at 2000 rpm for 40 s and annealed at 200 C for 10 min showed a power to conversion efficiency of 1.83 %, which is 8.6% higher than the device without the ZTO interlayer.