[12a-W541-1~12] 15.4 III-V-group nitride crystals

[12a-W541-3] GaN growth on {20-21} GaN template with very small number of
stacking faults by hydride vapor phase epitaxy

〇Syogo Shigu¹, Satoru Fujimoto², Narihito Okada², Jie Song³, Jung Han³, Kazuyuki Tadatomo² (1.Department of Eng,Yamaguchi Univ., 2.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 3.Yale Univ.)

Keywords:HVPE, semi-polar, GaN