The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-W541-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 12, 2019 9:00 AM - 12:15 PM W541 (W541)

Narihito Okada(Yamaguchi Univ.), Hajime Fujikura(SCIOCS)

9:15 AM - 9:30 AM

△ [12a-W541-2] Growth of Lattice-relaxed InGaN Thick Films by Tri-halide Vapor Phase Epitaxy

〇(M2)Rio Uei1, Mitsuki Kawabe1, Kentaro Ema1, Hisashi Murakami1, Yoshinao Kumagai1, Akinori Koukitu1 (1.Tokyo Univ. of Agriculture and Technology)

Keywords:InGaN, halide vapor phase epitaxy