[12a-W541-1~12] 15.4 III-V-group nitride crystals

△ [12a-W541-7] High-rate growth of a thick freestanding GaN wafer with CH₄ by OVPE

〇(B)Masahiro Kamiyama¹, Yoshikazu Gunji¹, Haruya Kobayashi¹, Takahiro Oshiba¹, Akira Kitamoto¹, Masayuki Imanishi¹, Masashi Yoshimura¹, Masashi Isemura², Tomoaki Sumi³, Junichi Takino^1,3, Yoshio Okayama³, Masaki Nobuoka³, Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc., 3.Panasonic Corporation)

Keywords:OVPE, CH4, GaN