[12a-W541-1~12] 15.4 III-V-group nitride crystals

△ [12a-W541-8] Defect analysis for homoepitaxial GaN thick films grown by OVPE method

〇Miki Manabe¹, Tohei Tetsuya¹, Takino Junichi^2,3, Sumi Tomoaki², Imanishi Masayuki³, Mori Yusuke³, Sakai Akira¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Panasonic Corporation, 3.Grad. Sch. of Eng., Osaka Univ.)

Keywords:nitride semiconductor, OVPE method, multi photon